Ddr4 samsung de la goldnet (2907/96.43%)

Capacitate:8 gb Frecventa:peste 2000 mhz

Capacitate:4 gb Garantie:2103750 Memory layout (modules x size):1 x 4 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v

Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v

Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.2 v

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Internal memory:16 gb

Capacitate:8 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Latenta:21 - 24 cl

Capacitate:16 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 16 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v

Capacitate:16 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.2 v

Capacitate:16 gb Memory ranking:1 Memory layout (modules x size):1 x 16 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.1 v Memory voltage:1.2 v Latenta:13 - 16 cl

Capacitate:4 gb Memory layout (modules x size):1 x 4 gb Tensiune alimentare:1.1 v Memory voltage:1.2 v Latenta:13 - 16 cl

Capacitate:8 gb Frecventa:peste 2000 mhz