Ddr 2 4 gb de la Hynix in Componente laptopuri, jullian (7687/100%)

Tip:ddr Capacitate:32 gb Frecventa:peste 2000 mhz Kit:dual channel

Tip:ddr Capacitate:16 gb Frecventa:peste 2000 mhz

Tip:ddr Capacitate:8 gb Frecventa:peste 2000 mhz

Capacitate:32 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 32 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v

Capacitate:32 gb Tensiune alimentare:1.1 v Memory voltage:1.2 v Memory layout (modules x size):2 x 16 gb Latenta:21 - 24 cl

Capacitate:8 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Latenta:21 - 24 cl

Capacitate:32 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.2 v

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Internal memory:16 gb

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Internal memory:16 gb

Capacitate:16 gb Tensiune alimentare:1.1 v Internal memory:16 gb capacitate memorie ram:16gb Memory layout (modules x size):2 x 8 gb

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v Internal memory:16 gb

Capacitate:64 gb Tensiune alimentare:1.1 v Memory voltage:1.2 v Spd voltage:1.2 v Memory layout (modules x size):2 x 32 gb

Capacitate:4 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 4 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v

Capacitate:16 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 16 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v

Capacitate:16 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Tensiune alimentare:1.2 v