Hynix 4gb pc3-12800 ddr3 de la Samsung

Tip:ddr3 Capacitate:4 gb Frecventa:1600 mhz Kit:dual channel

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Latenta:21 - 24 cl latenta:22 cl

Capacitate:8 gb Memory ranking:1 Memory layout (modules x size):1 x 8 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Module configuration:1024m x 8

Capacitate:16 gb Memory ranking:1 Tensiune alimentare:1.2 v Memory voltage:1.2 v Master (outer) case gross weight:1.22 kg

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v Internal memory:16 gb

Capacitate:4 gb Memory layout (modules x size):1 x 4 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v Latenta:21 - 24 cl