Memorie 2rx8 12800 de la Samsung

Tip:ddr3 Capacitate:4 gb Frecventa:1600 mhz Kit:dual channel

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v Latenta:21 - 24 cl

Capacitate:8 gb Memory ranking:1 Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Latenta:21 - 24 cl latenta:22 cl

Tip:ddr3 Capacitate:4 gb Frecventa:1600 mhz

Capacitate:4 gb Memory layout (modules x size):1 x 4 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v Latenta:21 - 24 cl

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Internal memory:16 gb

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Tensiune alimentare:1.2 v Internal memory:16 gb capacitate memorie ram:16gb