Memorie sodimm ddr4 2400 de la Samsung

Tip:ddr3 Capacitate:2 gb Frecventa:667 mhz Kit:dual channel

Capacitate:8 gb Frecventa:1600 mhz Memory layout (modules x size):1 x 8 gb Memory layout:1 x 8192 mb Tensiune alimentare:1.35 v

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Internal memory:16 gb

Tip:ddr3 Capacitate:8 gb Frecventa:1600 mhz

Capacitate:32 gb Memory layout (modules x size):1 x 32 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Module configuration:1024m x 8

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v Internal memory:16 gb

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v Internal memory:16 gb

Capacitate:8 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Module configuration:1024m x 16 Latenta:17 - 20 cl

Capacitate:32 gb Memory layout (modules x size):1 x 32 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v Memory ranking:2

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Latenta:21 - 24 cl latenta:22 cl

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Module configuration:1024m x 8

Capacitate:32 gb Memory ranking:1 Tensiune alimentare:1.1 v Memory voltage:1.1 v Master (outer) case gross weight:1.28 kg