Tip:ddr3 Capacitate:4 gb Frecventa:1600 mhz Kit:dual channel
Memorii ram ddr3 de la Samsung, bradului (5270/87.17%)
(o oferta)Produse asemanatoare
Tip:ddr3 Capacitate:8 gb Frecventa:1600 mhz
Capacitate:64 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Tensiune alimentare:1.1 v Memory voltage:1.1 v
Capacitate:16 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 16 gb Memory voltage:1.1 v Tensiune alimentare:1.1 v
Capacitate:32 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 32 gb Memory voltage:1.1 v Tensiune alimentare:1.35 v
Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.2 v
Capacitate:4 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 4 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v
Capacitate:32 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 32 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v
Capacitate:8 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Latenta:21 - 24 cl
Capacitate:64 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory voltage:1.2 v Tensiune alimentare:1.2 v
Capacitate:8 gb Operating temperature (t-t):0 - 85 °c Memory voltage:1.2 v Tensiune alimentare:1.2 v Module configuration:1024m x 16
Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory layout (modules x size):1 x 8 gb
Capacitate:4 gb Frecventa:1600 mhz Memory layout (modules x size):1 x 4 gb Tensiune alimentare:1.35 v Memory voltage:1.35 v
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