Ram ddr4 2666mhz de la Samsung in Piese si componente laptop

Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory layout (modules x size):1 x 8 gb

Tip:ddr3 Capacitate:8 gb Frecventa:1600 mhz

Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.2 v

Capacitate:8 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Latenta:21 - 24 cl

Tip:ddr3 Capacitate:8 gb Frecventa:1600 mhz

Capacitate:8 gb Frecventa:1600 mhz Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 8 gb

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.1 v Latenta:21 - 24 cl Cas latency:22

Capacitate:16 gb Tensiune alimentare:1.1 v Internal memory:16 gb capacitate memorie ram:16gb Memory layout (modules x size):2 x 8 gb

Capacitate:8 gb Frecventa:1600 mhz Memory layout (modules x size):1 x 8 gb Memory voltage:1.35 v Tensiune alimentare:1.35 v

Capacitate:8 gb Operating temperature (t-t):0 - 85 °c Memory voltage:1.2 v Tensiune alimentare:1.2 v Module configuration:1024m x 16