Socket p de la TE Connectivity, electronicmag (2/66.67%)

Tip:ddr Capacitate:32 gb Frecventa:peste 2000 mhz Kit:dual channel

Capacitate:1 gb

Tip:ddr3 Capacitate:1 gb Frecventa:1066 mhz

Tip:ddr Capacitate:8 gb Frecventa:peste 2000 mhz

Tip:ddr Capacitate:16 gb Frecventa:peste 2000 mhz

Tip:ddr3 Capacitate:4 gb Frecventa:1600 mhz Kit:dual channel

Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory layout (modules x size):1 x 8 gb

Capacitate:16 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.2 v

Capacitate:16 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 16 gb Memory voltage:1.1 v Tensiune alimentare:1.1 v

Tip:ddr2 Capacitate:1 gb Frecventa:800 mhz

Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.2 v

Capacitate:4 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 4 gb Tensiune alimentare:1.2 v Memory voltage:1.2 v

Capacitate:32 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 32 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v

Capacitate:8 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 8 gb Tensiune alimentare:1.2 v Latenta:21 - 24 cl