Memorie Hynix de la Samsung in Piese si componente laptop

Tip:ddr3 Capacitate:2 gb Frecventa:667 mhz Kit:dual channel

Capacitate:64 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Tensiune alimentare:1.1 v Memory voltage:1.1 v

Capacitate:16 gb Operating temperature (t-t):0 - 85 °c Memory layout (modules x size):1 x 16 gb Memory voltage:1.1 v Tensiune alimentare:1.1 v

Capacitate:16 gb Memory ranking:1 Memory layout (modules x size):1 x 16 gb Memory voltage:1.1 v Tensiune alimentare:1.1 v

Capacitate:8 gb Memory layout (modules x size):1 x 8 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Module configuration:1024m x 8

Capacitate:8 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory layout (modules x size):1 x 8 gb

Capacitate:16 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.2 v

Capacitate:16 gb Memory layout (modules x size):1 x 16 gb Memory voltage:1.2 v Tensiune alimentare:1.2 v Internal memory:16 gb

Capacitate:8 gb Operating temperature (t-t):0 - 85 °c Memory voltage:1.2 v Tensiune alimentare:1.2 v Module configuration:1024m x 16

Capacitate:32 gb Storage temperature (t-t):-55 - 100 °c Operating temperature (t-t):0 - 85 °c Memory ranking:1 Memory voltage:1.1 v

Capacitate:32 gb Memory ranking:1 Tensiune alimentare:1.1 v Memory voltage:1.1 v Memory layout (modules x size):2 x 32 gb